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Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS General Description The AZ4559 consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, excellent channel separation, wide range of operating voltage and internal frequency compensation. It can work with 18V maximum power supply voltage or single power supply up to 36V. The AZ4559 is available in DIP-8 and SOIC-8 packages. AZ4559 Features * * * * * * Internally Frequency Compensated Large Signal Voltage Gain: 100dB Typical Gain and Phase Match between Amplifiers Gain Bandwidth Product (at 10KHz): 6MHz Slew Rate: 3V/s Typical Pin to Pin Compatible with MC1458 Applications * * Audio AC-3 Decoder System Audio Amplifier SOIC-8 DIP-8 Figure 1. Package Types of AZ4559 Aug. 2006 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 INPUT 1INPUT 1+ VEE 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ AZ4559 Figure 2. Pin Configuration of AZ4559 (Top View) Functional Block Diagram VCC - Input + Input Output VEE Figure 3. Functional Block Diagram of AZ4559 (Each Amplifier) Aug. 2006 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Ordering Information AZ4559 E1: Lead Free AZ4559 Circuit Type Package M: SOIC-8 P: DIP-8 Package Temperature Range -40 to 85oC -40 to 85oC Part Number Tin Lead AZ4559M AZ4559MTR AZ4559P Lead Free AZ4559M-E1 AZ4559MTR-E1 AZ4559P-E1 Blank: Tin Lead TR: Tape and Reel Blank: Tube Marking ID Tin Lead 4559M 4559M AZ4559P Lead Free 4559M-E1 4559M-E1 AZ4559P-E1 Packing Type Tube Tape & Reel Tube SOIC-8 DIP-8 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Input Voltage Differential Input Voltage Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) Power Dissipation Symbol VCC VEE VI VID TJ TSTG TL DIP PD SOIC Value +20 -20 15 30 150 -65 to 150 260 800 500 mW Unit V V V V oC oC o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operating Temperature Range Aug. 2006 Rev. 1. 2 3 Min 2 -40 Max 18 85 Unit V o C BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Electrical Characteristics Operating Conditions: VCC=+15V, VEE= -15V, TA=25oC, unless otherwise specified. Parameter Input Offset Voltage Input Offset Current Input Bias Current Large Signal Voltage Gain Supply Voltage Rejection Ratio Supply Current Input Common Mode Voltage Range Common Mode Rejection Ratio Output Voltage Swing Symbol VIO IIO IIB AVD SVR ICC VICM CMRR VO RS10k RL10k RL2k VI=10V, RL=2k, CL=100pF, unity gain VI=20mV, RL=2k, CL=100pF, unity gain VI=20mV, RL=2k, CL=100pF, unity gain 0.3 VCM=0V VCM=0V RL= 2k, VO=10V RS10k All Amplifiers, No Load 85 80 Conditions Min Typ 0.5 10 70 100 95 2.5 5.0 Max 3 100 400 Unit mV nA nA dB dB mA V 95 dB V AZ4559 12 70 12 10 14 13 3.0 0.25 9 0.7 45 Slew Rate Rise Time Overshoot Input Resistance Output Resistance Unity Gain Bandwidth Gain Bandwidth Product Total Harmonic Distortion Plus Noise Equivalent Input Noise Voltage Density Output Current SR TR KOV RI RO B GBWP THD+N eN ISINK ISOURCE V/s s % M MHz MHz % 3.5 VI= 10mV, RL=2k, CL=100pF, f=10kHz f=1kHz, AV=6dB, RL=10k, VO=1VRMS RS=100, f=1kHz V-=1V, V+=0V, VO=2V V+=1V, V-= 0V, VO=2V 6.0 0.002 10 65 nV--------- Hz mA 35 Aug. 2006 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Typical Performance Characteristics AZ4559 120 20 100 Maximum Output Voltage Swing (V) Open Loop Gain (dB) 15 80 60 10 VCC=+15V, VEE=-15V, RL=2K, THD+N<5% 40 20 5 0 1 10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k 1M Frequency (Hz) Frequency (Hz) Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency 16 3.2 12 Maximum Output Voltage Swing (V) 3.0 8 P o sitive V o lta g e S w in g Supply Current (mA) N e g a tive V o lta g e S w in g 2.8 4 2.6 0 -4 2.4 -8 2.2 -12 2.0 1k 10k -16 100 -40.0 -20.0 0.0 20.0 40.0 60.0 O 80.0 100.0 120.0 R e sista n ce L o a d ( ) Temperature ( C) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Supply Current vs. Temperature Aug. 2006 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AZ4559 5 120 4 100 Input Offset Voltage (mV) 3 Input Bias Current (nA) -20.0 0.0 20.0 40.0 60.0 O 80 2 60 1 40 0 -1 20 -2 -40.0 80.0 100.0 120.0 0 -40.0 -20.0 0.0 20.0 40.0 60.0 O 80.0 100.0 120.0 Temperature ( C) Temperature ( C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Aug. 2006 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Typical Application AZ4559 R1 20K 1% C1 VEE=-12V 150pF VIN C2 R2 10K 1% 22F/ 25V C5 1000pF R4 6.8K R3 3.3K 1% 2 (6) 4 OUT +8 1 (7) C3 0.1F GND C4 VOUT AZ4559 3 (5) 22uF/25V R5 10K C6 0.1F GND GND VCC=+12V GND GND Figure 10. Typical Application of AZ4559 in Audio 2nd Order Low Pass Filter (FO=50.58KHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group Delay=4.48ms) Aug. 2006 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AZ4559 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Aug. 2006 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AZ4559 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Aug. 2006 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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